論文リスト

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雑誌論文:

• Anisotropy behavior of dislocation nucleation from a sharp corner in copper,
  Yu Sun, Satoshi Izumi, Shotaro Hara, Shinsuke Sakai, J. Comput. Sci. Tech. 5 (2011) 54-61.

• Reaction Pathway Analysis of Homogeneous Dislocation Nucleation in a Perfect Molybdenum Crystal,
  Hasan Aftab Saeed, Satoshi Izumi, Shotaro Hara, Shinsuke Sakai, MRS Online Proceedings Library. 1297 (2011) 10-17.

• Adaptive strain-boost hyperdynamics simulations of stress-driven atomic processes,
  Shotaro Hara and Ju Li, Phys. Rev. B 82 (2010) 184114.

• Transition Pathway Analysis of Homogeneous Dislocation Nucleation in a Perfect Silicon Crystal,
  Hasan Aftab Saeed, Satoshi Izumi, Shotaro Hara, Shinsuke Sakai, Mater. Res. Soc. Symp. Proc. FF-05-14 (2010) 1224.

• Reaction pathway analysis for dislocation nucleation from Ni surface step,
  Shotaro Hara, Satoshi Izumi and Shinsuke Sakai, J. Appl. Phys. 106 (2009) 093507.

• Multiscale analysis on the onset of nanoindentation-induced delamination: Effect of high-modulus Ru overlayer,
  Shotaro Hara, Tomohisa Kumagai, Satoshi Izumi and Shinsuke Sakai, Acta. Mater. 57 (2009) 4209-4216.

• Development of empirical bond-order-type interatomic potentialfor amorphous carbon structures,
  Tomohisa Kumagai, Shotaro Hara, J. Choi and Satoshi Izumi and Takahisa Kato, J. Appl. Phys. 105 (2009) 064310.

• Simulations of an interface crack nucleation during nanoindentaion: molecular dynamics and finite element coupling approach,
  Shotaro Hara, Satoshi Izumi, Shinsuke Sakai, Yoshiyuki Eguchi and Tomio Iwasaki, Mater. Res. Soc. Symp. Proc. U08-29 (2008) 1086.

• Development of Interatomic Potential for Zr-Ni Amorphous Systems,
  Thomohisa Kumagai, Shotaro Hara, Satoshi Izumi and Shinsuke Sakai, Materials Transactions 48 (2007) 1313-1321.

• Development of a bond-order type interatomic potential for Si-B systems,
  Thomohisa Kumagai, Shotaro Hara, Satoshi Izumi and Shinsuke Sakai, Modelling Simul. Mater. Sci. Eng. 14 (2006) 29-37.

• Development of a method for making interatomic potential: an application to metallic systems,
  Thomohisa Kumagai, Shotaro Hara, Satoshi Izumi and Shinsuke Sakai, Mater. Sci. Forum 539-543 (2006) 2123-2128.

• シリコンの固相成長速度へのヒ素原子の影響に関する分子動力学解析,
  泉聡志・村井克成・原祥太郎・熊谷知久, 酒井信介, 材料 55 (2006) 285-289.

• シリコンの融点と弾性定数を再現するボンドオーダ型原子間ポテンシャルの開発,
  熊谷知久, 原祥太郎, 泉聡志, 酒井信介, 材料 55 (2006) 1-7.

• Surface energy, stress and structure of well-relaxed amorphous silicon: A combination approach of ab initio and classical molecular dynamics,
  Shotaro Hara, Tomohisa Kumagai, Satoshi Izumi and Shinsuke Sakai, Surface Science 585 (2005) 17-24.

• シリコンのアモルファス−結晶界面の構造/力学的特性: 分子動力学アプローチ,
  原祥太郎、泉聡志、熊谷知久、酒井信介, 機械学会論文集（A編） 71 (2005) 23-29.

• Molecular dynamics study on homogeneous crystal nucleation in amorphous silicon,
  Satoshi Izumi, Shotaro Hara, Tomohisa Kumagai and Shinsuke Sakai, J. Crystal Growth 274 (2005) 47-54.

• 第一原理計算と古典分子動力学の組み合わせ解析によるアモルファスシリコン表面の構造・力学的特性評価,
  原祥太郎、熊谷知久、泉聡志、酒井信介, 材料 54 (2005) 45-50.

• Elastic properties of the surfaces and interfaces of crystal and amorphous silicon,
  Satoshi Izumi, Shotaro Hara, Tomohisa Kumagai and Shinsuke Sakai, IUTAM Symposium on Mesoscopic Dynamics of Fracture Process and Material Strength (2004) 117-127.

• A method for calculating surface stress and surface elastic constants by molecular dynamics; Application to the surface of crystal and amorphous silicon,
  Satoshi Izumi, Shotaro Hara, Tomohisa Kumagai and Shinsuke Sakai, Thin Solid Films 467 (2004) 253-260.

• Classification of amorphous-silicon microstructures by order parameters: Molecular dynamics study,
  Satoshi Izumi, Shotaro Hara, Tomohisa Kumagai and Shinsuke Sakai, Comput. Mater. Sci. 31 (2004) 258-268.

• Structural and mechanical properties of well-relaxed amorphous-crystal interface in silicon: Molecular dynamics study,
  Satoshi Izumi, Shotaro Hara, Tomohisa Kumagai and Shinsuke Sakai, Comput. Mater. Sci. 31 (2004) 279-286.

• Development of a molecular dynamics potential for Si-H systems and its application to CVD reaction process,
  Satoshi Izumi, Yusuke Sato, Shotaro Hara and Shinsuke Sakai, Surface Science 560 (2004) 1-11.

• Si-H系分子動力学ポテンシャルの開発とCVD反応過程への応用,
  泉聡志、佐藤裕輔、原祥太郎、酒井信介, 材料 52 (2003) 225-230.

• アモルファスシリコンの表面エネルギ・表面応力,
  泉聡志、原祥太郎、酒井信介, 材料 52 (2003) 231-234.

• 局所自己アフィンフラクタルによる破壊遷移部の同定,
  泉聡志, 橘鷹伴幸, 原祥太郎, 酒井信介, 機械学会論文集A 68 (2002) 78-85.

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解説記事:

• 東京大学機械系三学科における3次元CADによる設計教育,
  村上存，濱口哲也，及川和広，草加浩平，柳澤秀吉，泉聡志，原祥太郎, 設計工学 42 (2007) 11.

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